Deposition
Tystar LPCVD Furnace
The Tystar Low-Pressure-Chemical-Vapor-Deposition (LPCVD) object consists of four horizontal sub-atmospheric furnace tubes that can process up to 6″ diameter silicon wafers. The furnaces are fully computer controlled and are configured to deposit doped and undoped polysilicon, silicon dioxide, and silicon nitride films. The object is capable of depositing films with wafer-to-wafer and within-wafer uniformity of better than 5%. This object was donated to UTD by the Von Ehr Foundation.
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Control Charts
Plasma-Therm 790 PECVD
The Plasma Enhanced Chemical Vapor Deposition Plasma-Therm 790 PECVD tool is configured with 2% silane in helium to deposit high-quality silicon carbide, silicon dioxide, silicon nitride, and amorphous silicon films at temperatures from 100 C to 300 C. The tool was donated to UTD in May 2004 by the Mykrolis Corporation.
Process Data
Control Charts
Cambridge NanoTech Savannah 100 Atomic Layer Deposition
The Atomic Layer Deposition system deposits thin films of dielectrics such as hafnium oxide.
Process Data
Control Chart
SCS Parylene Deposition
The Parylene coater deposits parylene in thin films to serve as an insulating coating for organic semiconductors.