Deposition

The Tystar Low-Pressure-Chemical-Vapor-Deposition (LPCVD) object consists of four horizontal sub-atmospheric furnace tubes that can process up to 6″ diameter silicon wafers. The furnaces are fully computer controlled and are configured to deposit doped and undoped polysilicon, silicon dioxide, and silicon nitride films. The object is capable of depositing films with wafer-to-wafer and within-wafer uniformity of better than 5%. This object was donated to UTD by the Von Ehr Foundation.

Process Data

Control Charts

PM Details

PD01 is a  Plasma-Therm 790 PECVD tool  that is configured with 2% silane in helium to deposit high-quality silicon dioxide, silicon nitride, and amorphous silicon films at temperatures from 100 C to 300 C. The tool was donated to UTD in May 2004 by the Mykrolis Corporation. PD02 is also a Plasma-Therm 790 PECVD system that can deposit high quality silicon carbide, silicon oxide, silicon nitride films. The tool was purchased for the lab by Dr. Stuart Cogan in Fall 2013.

Process Data

Control Charts

 

The Atomic Layer Deposition system deposits thin films of dielectrics such as hafnium oxide, silicon oxide, and aluminum oxide. The tool can be configured for titanium oxide upon user request. The tool can easily switch from water to ozone precursor. Users may request additional training on the ozone generator.

Process Data

Control Chart

The Parylene coater deposits parylene in thin films to serve as an insulating coating for organic semiconductors.

Parylene Deposition Uniformity

Dual plasma frequency deposition for SiC, SiO2. a-Si and SiN…Coming in July 2020

For metal and metal nitride deposition…coming fall 2020