Deposition

The Tystar Low-Pressure-Chemical-Vapor-Deposition (LPCVD) object consists of four horizontal sub-atmospheric furnace tubes that can process up to 6″ diameter silicon wafers. The furnaces are fully computer controlled and are configured to deposit doped and undoped polysilicon, silicon dioxide, and silicon nitride films. The object is capable of depositing films with wafer-to-wafer and within-wafer uniformity of better than 5%. This object was donated to UTD by the Von Ehr Foundation.

Process Data

Process Data T1: Silicon-Nitride

Process Data T1: Low-Stress Nitride

Process Data T2: Polysilicon

Process Data T3: N+ PolySilicon

Process Data T3: P+ PolySilicon

Process Data: Low-Temperature Oxide

Control Charts

Control Chart: Silicon Nitride

Control Chart: Low-Stress Nitride

Control Chart: PolySilicon

Control Chart: Low-Temperature Oxide

PM Details

PD01 is a  Plasma-Therm 790 PECVD tool  that is configured with 2% silane in helium to deposit high-quality silicon dioxide, silicon nitride, and amorphous silicon films at temperatures from 100 C to 300 C. The tool was donated to UTD in May 2004 by the Mykrolis Corporation. PD02 is also a Plasma-Therm 790 PECVD system that can deposit high quality silicon carbide, silicon oxide, silicon nitride films. The tool was purchased for the lab by Dr. Stuart Cogan in Fall 2013.

Process Data

Low-Stress Nitride

Process Data: Oxide

Process Data: Polysilicon

Process Data: Silicon Carbide

Control Charts

Control Chart: Low-Stress Nitride

Control Chart: Oxide

Control Chart: Polysilicon

Control Chart: Silicon Carbide

The Atomic Layer Deposition system deposits thin films of dielectrics such as hafnium oxide, silicon oxide, and aluminum oxide. The tool can be configured for titanium oxide upon user request. The tool can easily switch from water to ozone precursor. Users may request additional training on the ozone generator.

Process Data

Process Data: 10nm Al2O3

Process Data: 10nm HfO2 with H2O

Process Data: 10nm HfO2 with O3

Control Chart

Control Chart: 10nm Al2O3

The Parylene coater deposits parylene in thin films to serve as an insulating coating for organic semiconductors.

Parylene Deposition Uniformity

PD03 is a PlasmaTherm Vision 310 plasma enhanced chemical vapor deposition (PECVD) instrument in service since 2021. It deposits high-quality silicon oxide of uniform thickness across the whole sample platen at 300 degree C deposition temperature. It also supports silicon carbide films deposition using various custom recipes developed at UT Dallas.

For metal and metal nitride deposition…coming fall 2020