Thermal Processing


Jetfirst 200 Rapid Thermal Processor

The JetFirst 200 is a halogen lamp heated Rapid Thermal Process system that is capable of rapidly  heating samples from ambient up to 1200 C. The object is provided with closed loop temperature control set by either a thermocouple or optical pyrometer. The reaction chamber can accommodate wafers up to 200 mm in diameter with the option of either a silicon or silicon carbide susceptor. Available chamber ambients are argon, nitrogen, oxygen, forming gas, or vacuum. A software interface provides easy recipe programming and monitoring of the system.

JetFirst 200 Calibrations – December 2009 Calibrations


TR02/TR03 MPTC RTP – 600 Rapid Thermal Processor

The MPTC RTP-600 is a compact, single-wafer, desk-top rapid thermal process system that is capable of rapidly heating samples from ambient up to 1200 C. The object features an easily interchangeable quartz heating chamber with closed-loop temperature control and programmable Time-Temperature profiles. The reaction chamber is configured to hold 100 mm wafers. The UTD Cleanroom has two of these objects. One unit is plumbed with nitrogen and oxygen and the other with nitrogen and forming gas.


Minibrute Atmospheric Furnaces

The four-stack Thermco MiniBrute atmospheric furnace system provides basic oxidation and annealing capabilities needed for electron device fabrication on wafers up to 100 mm in diameter. The system is presently configured to allow either O2, 10% O2 + 90% N2, N2, or forming gas to be delivered to tubes 2 and 3. The two bottom tubes are restricted to silicon-only processing. The bottom tube, which is used only for silicon oxidation, can also be connected to a steam generator for wet oxidation processes. The top tubes are designated for general use.

Process Data

Process Data Tube 4: 10nm Oxide

Control Charts

Control Chart Tube 4: 10nm Oxide

MOSCAP Data

MOSCAP Data Tube 4: 10nm Ox BV

MOSCAP Data Tube 4: 10nm Ox CV

Tystar Diffusion/Oxidation Furnaces

The four-stack Tystar atmospheric furnace system provides basic oxidation and annealing capabilities needed for silicon transistor and MEMS fabrication on wafers up to 150 mm in diameter. The system is presently configured with two oxidation tubes and two tubes for solid-source diffusion and annealing of N and P type dopants. The furnaces are fully computer-controlled and feature automated load/unload stations and remote recipe editing and download.

Process Data

T5: General Oxidation 10nm Oxide Process Data

T6: Gate Oxidation 10nm Oxide Process Data

T7: P-Type Diffusion Process Data

T8: N-Type Diffusion Process Data

Control Charts

Tube 5: 10nm Oxide Control Chart

Tube 6: 10nm Oxide Control Chart

MOSCAP Data

Tube 5: 10nm Ox BV MOSCAP Data

Tube 5: 10nm Ox CV MOSCAP Data

Tube 6: 10nm Ox BV MOSCAP Data

Tube 6: 10nm Ox CV MOSCAP Data